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The UNR221700L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a Mini3-G1 (SC-59) surface-mount package. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 200 mW. The device incorporates a single base resistor (R1) of 22 kΩ. Electrical characteristics specify a forward current transfer ratio (hFE) ranging from 160 to 460 at IC = 5 mA and VCE = 10 V. The transition frequency is rated at 150 MHz.
Verify the specific ordering suffix against official Panasonic documentation to confirm packaging format and compliance status. Confirm availability as lifecycle stages may change. Ensure the selected variant matches the required resistance value and hFE rank for the intended design.
Select this component when a compact NPN switching solution with integrated base biasing is required. Verify that the 22 kΩ internal resistance aligns with the drive circuit requirements. Check the hFE rank specifications to ensure adequate gain for the target collector current and saturation voltage conditions.
This part belongs to the UNR221x Series, which comprises various NPN transistors with different built-in resistor configurations. The series is designed to replace discrete transistor and resistor combinations, facilitating downsizing in digital circuit designs through standardized mini packages.
Consult the official Panasonic replacement list for verified substitute part numbers. Cross-reference internal resistance values and hFE ranks to ensure functional equivalence in the specific application circuit.