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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A MINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：510 Ohms
- Resistor - Emitter Base (R2)：5.1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：150 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：Mini3-G1
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Overview
The UNR221800L is a Silicon NPN epitaxial planar pre-biased transistor from the UNR221x Series, designed for digital circuits. It integrates an internal bias resistor network within a Mini3-G1 (SC-59) surface-mount package. Key electrical ratings include a collector-emitter voltage of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 200 mW at 25°C. The device features a base resistance (R1) of 0.51 kΩ and an emitter resistance (R2) of 5.1 kΩ. It exhibits a transition frequency of 150 MHz and a collector-emitter saturation voltage of 0.25 V under standard test conditions.
Feature Summary
- Integrates dual bias resistors to reduce component count and board space in digital switching applications.
- Utilizes a compact Mini3-G1 surface-mount package suitable for automated tape and magazine packing processes.
Applications
- Digital logic interface circuits
- Switching applications requiring integrated bias networks
- General-purpose electronic equipment
Procurement Notes
Verify the specific lifecycle status directly with Panasonic Industry, as the datasheet indicates maintenance or discontinuation phases may apply. Confirm that the internal resistance values match the design requirements before finalizing procurement decisions.
Selection Notes
Select this component when a dual-resistor bias configuration is required for NPN switching. Ensure the 0.51 kΩ base resistor and 5.1 kΩ emitter resistor align with the target circuit's drive and pull-down needs. Verify thermal constraints against the 200 mW dissipation limit.
Part Context
This part belongs to the UNR221x series of composite devices manufactured by Panasonic Industry. These components are silicon NPN epitaxial planar transistors specifically engineered for digital circuit applications, offering a consolidated solution for biasing requirements.
Replacement Considerations
Direct substitutes include MUN2240T1G and SMUN2240T1G from onsemi, as well as PDTC144TT,215 from Nexperia USA Inc. Verify pinout compatibility and internal resistance tolerances before substitution.
FAQ
What are the internal resistance values for the UNR221800L?
The UNR221800L contains a base resistor (R1) of 0.51 kΩ and an emitter resistor (R2) of 5.1 kΩ.
What is the maximum collector current rating?
The absolute maximum rating for the collector current (IC) is 100 mA at an ambient temperature of 25°C.
Does this component comply with RoHS directives?
Yes, the product complies with the RoHS Directive (EU 2002/95/EC).
