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The Panasonic UNR221D00L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a Mini3-G1 (SC-59) package with three terminals: Base (Pin 1), Emitter (Pin 2), and Collector (Pin 3). The device has a maximum collector-emitter voltage of 50 V and a maximum collector current of 100 mA. Internal resistance values are R1 = 47 kΩ and R2 = 10 kΩ. Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 30 at IC = 10 mA, VCE = 10 V, and a transition frequency (fT) of 150 MHz.
Verify the specific part number suffix against official manufacturer documentation to confirm exact resistance ratios and hFE rankings. Confirm RoHS compliance status and lifecycle stage, as maintenance or discontinuation notices may apply. Ensure ordering specifications match the required electrical parameters for the target application.
Select this component when a single NPN transistor with fixed bias resistors is required for digital switching. Verify that the internal resistor values (47 kΩ and 10 kΩ) align with the circuit design requirements. Check the hFE ranking and transition frequency if high-speed performance is critical for the application.
This component belongs to the UNR221x Series, which includes various combinations of NPN transistors and built-in resistors. The series is manufactured by Panasonic Electronic Components and is intended for standard digital circuit applications. Other variants in the series differ primarily in internal resistance values and hFE gain rankings.
Consult the manufacturer's datasheet for direct cross-references within the UNR221x series. Verify compatibility with alternative composite devices from other manufacturers by matching absolute maximum ratings, pin configurations, and internal resistance values.
The UNR221D contains a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 10 kΩ.
The total power dissipation (PT) is rated at 200 mW at an ambient temperature of 25°C.
The transition frequency is specified as 150 MHz under conditions of VCB = 10 V and IE = -2 mA.