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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A MINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：150 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：Mini3-G1
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Overview
The Panasonic UNR221E00L is a silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a Mini3-G1 (SC-59) package with dimensions of 2.8 mm x 1.5 mm x 0.4 mm. The device has a collector-emitter voltage rating of 50 V and a maximum collector current of 100 mA. Internal resistances are R1 = 47 kΩ and R2 = 22 kΩ. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 60 to 200 at IC = 5 mA, and a transition frequency (fT) of 150 MHz.
Feature Summary
- Integrates two internal biasing resistors to reduce component count and board space in digital switching applications.
- Utilizes a compact Mini3-G1 surface-mount package suitable for automated tape and magazine packing processes.
Applications
- Digital logic interface circuits
- Switching driver stages
- General-purpose electronic equipment
Procurement Notes
Verify the specific suffix '00L' against official Panasonic documentation to confirm exact resistance values and hFE ranking. Confirm RoHS compliance status and lifecycle stage directly with the manufacturer or authorized distributors before finalizing procurement plans.
Selection Notes
Select this component when a compact NPN transistor with fixed base and emitter resistors is required. Ensure the 50 V collector-emitter voltage and 100 mA current limits meet circuit requirements. Verify that the integrated 47 kΩ and 22 kΩ resistor values align with the specific biasing needs of the target application.
Part Context
This part belongs to the UNR221x Series, which includes various configurations of NPN transistors with different internal resistor combinations. The series is engineered for downsizing equipment and simplifying assembly through reduced part counts in standard digital circuit designs.
Replacement Considerations
Consult the official Panasonic datasheet for confirmed substitute part numbers within the UNR221x family or equivalent industry-standard pre-biased transistors. Do not assume functional equivalence without verifying pinout, voltage ratings, and internal resistance tolerances.
FAQ
What are the internal resistance values for the UNR221E?
The UNR221E variant contains an internal base resistor (R1) of 47 kΩ and an internal emitter-base resistor (R2) of 22 kΩ.
What is the transition frequency of the UNR221E?
The transition frequency (fT) is specified as 150 MHz under conditions of VCB = 10 V and IE = -2 mA.
What is the maximum total power dissipation?
The maximum total power dissipation (PT) is rated at 200 mW at an ambient temperature of 25°C.
