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The UNR221K00L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage (VCEO) of 50 V and a maximum collector current (IC) of 100 mA. The device includes an internal base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 4.7 kΩ. Electrical characteristics include a minimum forward current transfer ratio (hFE) of 20 at IC = 5 mA and VCE = 10 V. Transition frequency (fT) is specified at 150 MHz under standard test conditions.
Verify the specific ordering code against manufacturer documentation to confirm availability status. Check for lifecycle notifications such as planned maintenance or discontinuation. Ensure compliance with RoHS directives relevant to the target market. Confirm package type matches design requirements before finalizing procurement.
Select based on required hFE gain and resistor values. Verify voltage ratings match circuit operating conditions. Consider thermal dissipation limits for high-current applications. Compare transition frequency requirements against datasheet specifications. Evaluate package compatibility with existing PCB layouts.
Part of the Panasonic UNR221x series of composite transistors. Designed specifically for digital circuit applications requiring integrated biasing. Offers a compact alternative to discrete resistor-transistor combinations.
For the UNR221K variant, R1 is 10 kΩ and R2 is 4.7 kΩ.
The absolute maximum collector current (IC) is rated at 100 mA.
The transition frequency (fT) is typically 150 MHz when measured at VCB = 10 V and IE = -2 mA.