SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UNR221L00L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a Mini3-G1 (SC-59) surface-mount package. The device includes two integrated base resistors: R1 and R2, both specified at 4.7 kΩ. Absolute maximum ratings include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 200 mW at 25°C ambient temperature. The transition frequency is rated at 150 MHz.
Verify the specific suffix against official Panasonic documentation to confirm resistor values and electrical characteristics. Confirm availability status as lifecycle stages may vary by region. Ensure compliance with RoHS directives relevant to the target market before procurement.
Select this component when a pre-biased NPN transistor with equal value base resistors is required. Verify that the 4.7 kΩ resistance matches the circuit design requirements. Check the hFE rank and saturation voltage specifications against the load conditions.
This part belongs to the UNR221x Series, which encompasses various combinations of NPN transistors and built-in resistors. The series allows designers to choose specific resistor ratios and values to optimize drive currents and switching speeds for different digital logic families.
Direct substitutes include components with matching NPN topology, 50V rating, and identical 4.7kΩ/4.7kΩ internal resistor configuration. Verify pinout compatibility and thermal dissipation capabilities before substitution.
The UNR221L contains two built-in resistors, R1 and R2, both with a nominal value of 4.7 kΩ.
The absolute maximum collector current (IC) is 100 mA at an ambient temperature of 25°C.
Yes, it has a transition frequency (fT) of 150 MHz, making it suitable for many digital switching and signal processing applications.