UNR221L00L

UNR221L00L

$0.14
  • Description:TRANS PREBIAS NPN 50V 0.1A MINI3
  • Series:-

SKU:22516770711c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A MINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:150 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:Mini3-G1

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UNR221L00L

Overview

The UNR221L00L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a Mini3-G1 (SC-59) surface-mount package. The device includes two integrated base resistors: R1 and R2, both specified at 4.7 kΩ. Absolute maximum ratings include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 200 mW at 25°C ambient temperature. The transition frequency is rated at 150 MHz.

Feature Summary

  • Integrates dual bias resistors to reduce component count and board space in digital switching applications.
  • Utilizes a compact Mini3-G1 surface-mount package suitable for automated assembly processes.

Applications

  • Digital logic interface circuits
  • Switching applications in general electronic equipment
  • Signal level translation

Procurement Notes

Verify the specific suffix against official Panasonic documentation to confirm resistor values and electrical characteristics. Confirm availability status as lifecycle stages may vary by region. Ensure compliance with RoHS directives relevant to the target market before procurement.

Selection Notes

Select this component when a pre-biased NPN transistor with equal value base resistors is required. Verify that the 4.7 kΩ resistance matches the circuit design requirements. Check the hFE rank and saturation voltage specifications against the load conditions.

Part Context

This part belongs to the UNR221x Series, which encompasses various combinations of NPN transistors and built-in resistors. The series allows designers to choose specific resistor ratios and values to optimize drive currents and switching speeds for different digital logic families.

Replacement Considerations

Direct substitutes include components with matching NPN topology, 50V rating, and identical 4.7kΩ/4.7kΩ internal resistor configuration. Verify pinout compatibility and thermal dissipation capabilities before substitution.

FAQ

What are the internal resistor values for the UNR221L?

The UNR221L contains two built-in resistors, R1 and R2, both with a nominal value of 4.7 kΩ.

What is the maximum collector current for this device?

The absolute maximum collector current (IC) is 100 mA at an ambient temperature of 25°C.

Is this transistor suitable for high-frequency applications?

Yes, it has a transition frequency (fT) of 150 MHz, making it suitable for many digital switching and signal processing applications.

UNR221L00LUNR221L00L
$0.14
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