UNR221M00L

Overview

The UNR221M00L is a Silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a Mini3-G1 package (EIAJ SC-59) with three pins. Key electrical ratings include a collector-emitter voltage of 50 V, a collector current of 100 mA, and total power dissipation of 200 mW at 25°C. The internal configuration consists of a base resistor (R1) of 2.2 kΩ and an emitter resistor (R2) of 47 kΩ. The forward current transfer ratio ranges from 80 to 400, with a transition frequency of 150 MHz.

Feature Summary

• Built-in bias resistors reduce component count and equipment size
• Miniature package enables automatic insertion via tape or magazine packing

Applications

• Digital logic circuits
• Switching applications
• General-purpose electronic equipment

Procurement Notes

Verify the exact suffix against Panasonic's official documentation to confirm resistance values and marking codes. Confirm RoHS compliance status and lifecycle stage directly with the manufacturer before procurement.

Selection Notes

Select based on required hFE gain range and specific R1/R2 resistance ratios. Ensure operating conditions remain within the 50 V voltage and 100 mA current limits. Verify thermal requirements against the 200 mW power dissipation rating.

Part Context

This component belongs to the UNR221x series of pre-biased transistors. It integrates an NPN silicon epitaxial planar transistor with two internal resistors in a single surface-mount package, simplifying circuit design for digital switching tasks.

Replacement Considerations

Consult Panasonic Industry for verified substitute part numbers within the UNR221x family that match the required resistance values and electrical characteristics.