UNR221V00L

Overview

The UNR221V00L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an EIAJ SC-59 (Mini3-G1) package with three terminals. Absolute maximum ratings include a collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 200 mW at 25°C. The device incorporates two internal resistors: R1 is 2.2 kΩ and R2 is 2.2 kΩ. Electrical characteristics specify a forward current transfer ratio (hFE) minimum of 6 at IC = 5 mA and VCE = 10 V. Transition frequency is 150 MHz.

Feature Summary

• Integrates dual bias resistors to reduce component count and board space in digital switching applications.
• Utilizes a compact Mini3-G1 surface-mount package suitable for automated assembly processes.

Applications

• Digital logic interface circuits
• Switching applications in general electronic equipment
• Signal level translation

Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to confirm exact resistance values and packaging type. Confirm RoHS compliance status and lifecycle stage directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component when a single NPN transistor with integrated pull-up/pull-down resistors is required. Ensure the internal resistor values match the circuit design requirements. Verify that the 50 V voltage rating and 100 mA current capacity exceed the application's operational limits.

Part Context

This part belongs to the UNR221x series of composite devices manufactured by Panasonic Electronic Components. The series offers various combinations of NPN transistors and built-in resistors to simplify circuit designs for standard digital applications.

Replacement Considerations

Consult official Panasonic documentation for confirmed substitute part numbers within the UNR221x series or equivalent cross-references from other manufacturers.