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The Panasonic UNR222200L is a Silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a Mini3-G1 (SC-59) package and operates with a collector-emitter voltage of 50 V and a maximum collector current of 500 mA. The device includes an internal base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ. Key electrical characteristics include a forward current transfer ratio (hFE) of 50 at IC = 100 mA and VCE = 10 V, a collector-emitter saturation voltage of 0.25 V at IC = 10 mA, and a transition frequency of 200 MHz. Total power dissipation is rated at 200 mW.
Verify the exact lifecycle status through official manufacturer channels before finalizing procurement plans. Confirm that the specific ordering suffix matches the required resistance values and packaging format. Ensure compliance with RoHS directives as specified in the datasheet documentation.
Select this component when a compact NPN pre-biased transistor is required for standard digital logic levels. Verify that the 4.7 kΩ internal resistance configuration aligns with the target circuit drive requirements. Consider the Mini3-G1 footprint constraints during PCB layout planning.
This part belongs to the UNR222x series of transistors with built-in resistors from Panasonic. The series includes variants such as UNR2221, UNR2223, and UNR2224, which differ primarily in their internal resistor configurations. These components are engineered to simplify circuit design by replacing discrete biasing networks.
Cross-reference with other NPN pre-biased transistors offering identical 4.7k/4.7k resistor ratios and compatible SC-59 footprints. Validate pinout compatibility and ensure equivalent hFE and VCE(sat) specifications are met for direct substitution.