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The UNR222300L is a silicon NPN epitaxial planar pre-biased transistor from the UNR222x series, designed for digital circuits. It integrates two resistors within a Mini3-G1 (SC-59/SOT-23) surface-mount package to reduce component count and equipment size. Key electrical parameters include a collector-emitter breakdown voltage of 50 V, a maximum collector current of 500 mA, and a total power dissipation of 200 mW at 25°C. The device features a transition frequency of 200 MHz and a DC current gain (hFE) minimum of 60 at IC = 100 mA and VCE = 10 V. Internal resistance values are R1 = 10 kΩ and R2 = 10 kΩ.
Verify the specific lifecycle status directly with Panasonic Industry, as the datasheet indicates maintenance or discontinuation phases. Confirm that the Mini3-G1 package dimensions align with your PCB footprint requirements. Ensure the 50V rating and 200mW thermal limits meet your system's operational constraints before finalizing procurement.
Select this component when a single NPN transistor with integrated base and emitter-base resistors is required. The UNR2223 variant provides equal 10kΩ resistance values for both R1 and R2. Consider the 200MHz transition frequency for signal integrity in fast-switching environments. Verify compatibility with standard SMT reflow processes given the small form factor.
This part belongs to the UNR222x series of pre-biased transistors manufactured by Panasonic Industry. The series includes variants with different resistor combinations (UNR2221 through UNR2224) to suit various biasing needs. All members share the same NPN transistor core and Mini3-G1 package, differing only in the internal resistor network values.
Direct substitutes may include other NPN pre-biased transistors with similar 50V/500mA ratings and SC-59 packages. Verify pinout compatibility and resistor tolerance matches. Cross-reference with manufacturers like onsemi or Nexperia for equivalent functional replacements if availability is an issue.