UNR311100L

Overview

The UNR311100L is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Panasonic Industry. It integrates base resistor R1 and emitter-base resistor R2 within the SSSMini3-F1 package, which corresponds to the SOT-723 form factor. The device supports a maximum collector-emitter breakdown voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 35 at Ic=5mA and Vce=10V, with saturation voltage limited to 250 mV at Ib=300µA and Ic=10mA. The transition frequency is rated at 80 MHz, and power dissipation is capped at 100 mW.

Feature Summary

• Integrated biasing network reduces external component count and simplifies circuit layout
• Compact surface-mount packaging designed for space-constrained applications
• Optimized low-voltage saturation performance for efficient switching operations

Applications

• Signal switching circuits in portable electronic devices
• Driver stages for small-signal amplification
• Logic interface level shifting between microcontrollers and peripherals

Procurement Notes

Verify RoHS compliance status prior to procurement, as documentation indicates non-compliance. Confirm availability through authorized distributors, noting that the part status may be listed as obsolete. Ensure ordering suffixes match required packaging formats such as tape and reel. Validate datasheet revisions against specific production batches to guarantee parameter consistency.

Selection Notes

Select this component when a compact PNP solution with integrated biasing is required for low-power switching. Verify that the 50 V breakdown voltage meets system requirements. Consider the 100 mA current limit for load compatibility. Evaluate thermal constraints given the 100 mW power dissipation rating in the small outline package. Compare hFE and Vce(sat) specifications against alternative pre-biased transistors for equivalent performance.

Part Context

This component belongs to the UNR311 series of pre-biased transistors from Panasonic Industry. The series offers various configurations combining NPN or PNP transistors with internal resistors. These devices are engineered to replace discrete transistor-resistor networks, saving board space and assembly time in consumer electronics and industrial control modules.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for compatible pre-biased PNP transistors with similar pinouts and electrical ratings.