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The UNR311300L is a silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter breakdown voltage of -50 V and a maximum collector current of -100 mA. The device includes two internal resistors: R1 (base) and R2 (emitter), both specified at 47 kΩ. Key electrical characteristics include a DC current gain (hFE) of 80 at IC = -5 mA and VCE = -10 V, and a saturation voltage of -0.25 V at IC = -10 mA. The transition frequency is 80 MHz, with a total power dissipation rating of 100 mW.
Verify the specific suffix against official Panasonic documentation to confirm resistor values and package type. Confirm lifecycle status as maintenance or discontinued before finalizing procurement plans. Ensure compliance with export control regulations if applicable. Request the latest product standards directly from the manufacturer to validate specifications prior to purchasing.
Select this component when a compact PNP pre-biased transistor is required for digital switching. Verify that the 47 kΩ internal resistance values match the biasing requirements of the target circuit. Ensure the -50 V voltage rating and -100 mA current capacity exceed the operational limits of the application environment.
This part belongs to the UNR311 series of transistors with built-in resistors manufactured by Panasonic Industry. The series includes variants with different resistor configurations, such as the UNR311A and UNR311T. These components are specifically engineered for surface-mount applications where space constraints and assembly efficiency are critical factors in system design.
Check for direct substitutes within the UNR311 family, such as UNR311A or UNR311T, which share similar packages but differ in internal resistor values. Verify pinout compatibility and electrical ratings before substituting any alternative component.