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The UNR31A0G0L is a silicon PNP epitaxial planar pre-biased transistor designed for digital circuits. It integrates a single built-in base resistor (R1) of 47 kOhms within an SSSMini3-F2 surface-mount package. Key electrical parameters include a collector-emitter breakdown voltage of -50 V, a maximum collector current of -80 mA, and a total power dissipation of 100 mW at 25°C. The device features a forward current transfer ratio (hFE) ranging from 160 to 460 at Ic = -5 mA and Vce = -10 V, with a transition frequency of 80 MHz.
Verify the specific suffix '0G' against the manufacturer's official documentation to confirm exact packaging and compliance status. Confirm availability as the series may be subject to maintenance or discontinuation plans. Ensure the sourcing channel provides valid traceability for RoHS Directive compliance verification prior to procurement.
Select this component when a PNP pre-biased transistor with a 47 kOhm input resistance is required. Verify that the -80 mA collector current limit and 100 mW power dissipation meet the load requirements. Ensure the operating environment remains within the specified junction temperature range of 125°C maximum.
This part belongs to the Panasonic UNR31A0G series of transistors with built-in resistors. These components are engineered specifically for digital circuit applications where space constraints and assembly efficiency are priorities. The series utilizes silicon epitaxial planar technology to ensure stable performance across standard operating conditions.
Direct substitutes must match the PNP polarity, 50V rating, 47k Ohm internal resistor, and SSSMini3-F2 package. Verify pinout compatibility and thermal characteristics before substitution.