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The UNR31A100L is a silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter breakdown voltage of -50 V and a maximum collector current of -80 mA. The device includes an internal base resistor (R1) of 10 kΩ and an emitter-base resistor (R2) of 10 kΩ, resulting in a resistance ratio of 1.0. Key electrical characteristics include a forward current transfer ratio (hFE) of at least 35 at -5 mA, a collector-emitter saturation voltage of -0.25 V at -10 mA, and a transition frequency of 80 MHz. Total power dissipation is rated at 100 mW.
Verify the specific ordering suffix against the manufacturer's official product standards before purchase. Confirm that the component lifecycle status aligns with long-term availability requirements. Ensure compliance with RoHS directives and verify that the package type matches the intended PCB footprint design constraints.
Select this component when a compact PNP solution with integrated biasing is required for standard digital loads. Verify that the -50 V rating accommodates the system voltage peaks. Consider the 100 mW power dissipation limit relative to ambient temperature derating curves. Ensure the 10 kΩ input resistance matches the driving source impedance requirements.
This part belongs to the Panasonic UNR31A series of transistors with built-in resistors. These components utilize SSSMini3-F1 packaging to minimize board space. The series is engineered for general-purpose digital switching tasks where reduced external component count and simplified biasing networks are prioritized.
Consult the manufacturer's cross-reference data for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before substitution. Check for updated datasheet revisions that may indicate changes in mechanical dimensions or performance specifications.