UNR31A1G0L

UNR31A1G0L

$0.26
  • Description:TRANS PREBIAS PNP 50V SSSMINI3
  • Series:-

SKU:ef1738764473 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SSSMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:80 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SSSMini3-F2

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UNR31A1G0L

Overview

The UNR31A1G0L is a silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter breakdown voltage of -50 V and a maximum collector current of -80 mA. The device includes an internal base resistor (R1) of 10 kΩ and an emitter-base resistor (R2) of 10 kΩ, resulting in a resistance ratio of 1.0. Key electrical characteristics include a DC current gain (hFE) of 35 at -5 mA, a saturation voltage of -0.25 V at -10 mA, and a transition frequency of 80 MHz. Total power dissipation is rated at 100 mW.

Feature Summary

  • Integrated biasing network with R1 and R2 resistors simplifies circuit design.
  • Optimized for high-density mounting and equipment downsizing.
  • Designed to contribute to low power consumption in digital applications.

Applications

  • Digital logic circuits
  • General electronic equipment
  • Office equipment
  • Communications equipment

Procurement Notes

Verify the specific lifecycle status as the datasheet indicates maintenance or discontinuation stages. Confirm RoHS compliance details against the latest manufacturer standards before finalizing procurement plans. Ensure the SSSMini3-F2 package dimensions match the target PCB layout requirements.

Selection Notes

Select this component when a compact PNP pre-biased transistor is required for standard digital switching applications. Verify that the -80 mA collector current limit and 100 mW power dissipation are sufficient for the intended load conditions. Check that the 10 kΩ internal resistor values align with the driving source requirements.

Part Context

This part belongs to the Panasonic UNR series of transistors with built-in resistors. It utilizes the SSSMini3-F2 surface-mount package, which is distinct from other variants like the F1 or F3 packages found in similar models. The 'G' suffix typically denotes specific packaging or tape-and-reel configurations within this product line.

Replacement Considerations

Direct substitutes may include other Panasonic UNR series parts with matching pinouts and electrical ratings, such as the UNR31A9 or UNR311100L, provided the package type and resistor ratios are compatible. Always verify absolute maximum ratings and thermal characteristics before substitution.

FAQ

What is the internal resistance ratio between R1 and R2?

The datasheet specifies a nominal resistance ratio (R1/R2) of 1.0, with both resistors having a typical value of 10 kΩ.

Is this component suitable for aerospace or life support systems?

No. The datasheet explicitly states that these products are intended for standard applications and advises consulting sales staff for special applications like aerospace or life support systems.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is -50 V.

UNR31A1G0LUNR31A1G0L
$0.26
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