UNR31A300L

Overview

The UNR31A3 is a silicon PNP epitaxial planar pre-biased transistor designed for digital circuits. It integrates base resistor R1 and emitter-base resistor R2 within an SSSMini3-F1 package to facilitate high-density mounting. Key electrical parameters include a collector-emitter breakdown voltage of -50 V, a maximum collector current of -80 mA, and a transition frequency of 80 MHz. The device features a typical forward current transfer ratio (hFE) of 80 at -5 mA and includes built-in resistors of 47 kΩ each.

Feature Summary

• Integrated dual resistors reduce component count and simplify circuit design
• Compact surface-mount package supports high-density equipment assembly
• Optimized for low power consumption in standard digital logic applications

Applications

• General-purpose digital switching circuits
• Interface circuits between logic gates and loads
• Signal level conversion stages

Procurement Notes

Verify the specific lifecycle status through official Panasonic channels before finalizing procurement plans. Confirm that the RoHS compliance aligns with target market regulations. Ensure the SSSMini3-F1 footprint matches the intended PCB layout constraints during the design phase.

Selection Notes

Select this component when space constraints require integrated biasing resistors. Verify that the -80 mA collector current limit satisfies the load requirements. Ensure the operating voltage does not exceed the -50 V breakdown rating under all transient conditions.

Part Context

This part belongs to the UNR31 series of pre-biased transistors manufactured by Panasonic Electronic Components. The series utilizes silicon epitaxial planar technology to provide reliable performance in compact form factors suitable for modern electronic devices.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching the SSSMini3-F1 package, -50 V rating, and internal 47 kΩ resistor values.