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The UNR31A3G0L is a silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter breakdown voltage of -50 V and a maximum collector current of -80 mA. The device includes an input resistor (R1) of 47 kΩ and an emitter-base resistor (R2) of 47 kΩ, yielding a resistance ratio of 1.0. Key electrical characteristics include a forward current transfer ratio (hFE) of 80 at -5 mA, a collector-emitter saturation voltage of -0.25 V at -10 mA, and a transition frequency of 80 MHz. Total power dissipation is rated at 100 mW.
Verify the component status as maintenance or discontinued through official Panasonic channels before finalizing procurement plans. Confirm that the SSSMini3-F2 package dimensions and marking symbol CH match the design requirements. Ensure compliance with RoHS Directive standards and observe absolute maximum ratings during handling and operation to prevent device failure.
Select this component when a compact PNP pre-biased transistor is required for digital logic applications. The integrated 47 kΩ resistors simplify circuit design by reducing external component count. Verify that the -50 V voltage rating and -80 mA current capacity align with the specific load requirements of the target application.
This part belongs to the UNR31A series of transistors with built-in resistors manufactured by Panasonic Electronic Components. It utilizes the SSSMini3-F2 surface-mount package, which measures 1.2 mm by 1.2 mm. The series is engineered to support the miniaturization trends in modern electronic devices while maintaining reliable performance in standard digital switching environments.
Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with the SSSMini3-F2 package and the specific internal resistor values.