UNR31A400L

Overview

The UNR31A400L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter breakdown voltage of -50 V and a maximum collector current of -80 mA. The device includes an internal base resistor (R1) of 10 kΩ and an emitter-base resistor (R2) of 47 kΩ, yielding a resistance ratio of approximately 0.21. Key electrical characteristics include a forward current transfer ratio (hFE) of 80 at -5 mA, a transition frequency (fT) of 80 MHz, and a collector-emitter saturation voltage of -0.25 V at -10 mA. Total power dissipation is rated at 100 mW.

Feature Summary

• Suitable for high-density mounting and downsizing of equipment
• Contributes to low power consumption

Applications

• Digital circuits

Procurement Notes

Verify the component status as maintenance or discontinued through official Panasonic channels before finalizing design specifications. Confirm that the SSSMini3-F1 package dimensions align with the target PCB layout requirements. Ensure compliance with RoHS Directive standards during procurement processes.

Selection Notes

Select this component when a compact PNP pre-biased transistor is required for digital logic applications. The integrated 10 kΩ base resistor simplifies circuit design by reducing external component count. Verify that the -50 V rating and -80 mA current capacity meet the specific load requirements of the application.

Part Context

This part belongs to the UNR31A series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series utilizes silicon PNP epitaxial planar technology. The UNR31A4 variant specifically integrates a 10 kΩ base resistor configuration within the SSSMini3-F1 surface-mount package.

Replacement Considerations

Consult official Panasonic documentation for confirmed substitute part numbers. Cross-referencing requires matching the SSSMini3-F1 package, -50 V rating, and similar internal resistor values.