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The UNR31A4G0L is a silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter breakdown voltage of -50 V and a maximum collector current of -80 mA. The device includes an internal base resistor (R1) of 10 kΩ and an emitter-base resistor (R2) of 47 kΩ, yielding a resistance ratio of approximately 0.21. Key electrical characteristics include a forward current transfer ratio (hFE) of 80 at -5 mA and a collector-emitter saturation voltage of -0.25 V at -10 mA. The transition frequency is 80 MHz, with a total power dissipation rating of 100 mW.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape/reel specifications. Confirm the current lifecycle status, as this series may be subject to maintenance or discontinuation schedules. Ensure compliance with RoHS directives and verify moisture sensitivity levels prior to surface mount processing.
Select this component when a compact PNP solution with integrated biasing is required for digital switching. Verify that the 10 kΩ input resistance aligns with the driving source requirements. Ensure the operating ambient temperature remains within the specified range to maintain the 100 mW power dissipation capability without derating.
This part belongs to the Panasonic UNR31A series of transistors with built-in resistors. These components are engineered for standard electronic equipment such as household appliances and measuring instruments. The series utilizes the SSSMini3-F2 package to facilitate automated surface mount assembly.
Consult the manufacturer's official substitution list for verified alternatives. Cross-reference pin configurations and electrical ratings if considering generic equivalents.