UNR31A5G0L

Overview

The UNR31A5G0L is a silicon PNP epitaxial planar transistor with a built-in base resistor, designed for digital circuits. It features a collector-emitter breakdown voltage of -50 V and a maximum collector current of -80 mA. The device includes an internal 10 kΩ input resistor (R1) and operates within a junction temperature range up to 125 °C. Total power dissipation is rated at 100 mW, with a transition frequency of 80 MHz. It utilizes the SSSMini3-F2 surface-mount package.

Feature Summary

• Integrates a single built-in bias resistor to reduce external component count
• Optimized for high-density mounting and equipment downsizing
• Designed to contribute to low power consumption in digital applications

Applications

• Digital logic circuits
• General electronic equipment
• Office equipment
• Communications equipment

Procurement Notes

Verify the specific ordering suffix 'G' against official Panasonic documentation to confirm packaging details. Confirm current lifecycle status as the datasheet indicates maintenance or discontinuation phases. Ensure compliance with RoHS Directive requirements during procurement.

Selection Notes

Select this component when a compact PNP pre-biased transistor is required for digital switching. Verify that the 10 kΩ internal resistance matches the circuit design needs. Check thermal constraints to ensure operation remains within the 100 mW power dissipation limit.

Part Context

This part belongs to the UNR31 series of transistors with built-in resistors manufactured by Panasonic Industry. It is specifically engineered for small-signal digital applications requiring minimal footprint. The SSSMini3-F2 package supports automated surface-mount assembly processes.

Replacement Considerations

Consult official Panasonic resources for verified substitute part numbers. Cross-reference electrical parameters such as VCEO, IC, and R1 values before considering alternatives.