UNR31A600L

Overview

The UNR31A6 is a silicon PNP epitaxial planar pre-biased transistor designed for digital circuits. It integrates a built-in base resistor (R1) of 4.7 kΩ within an SSSMini3-F1 package to facilitate high-density mounting and downsizing. The device supports a collector-emitter voltage (VCEO) of -50 V and a maximum collector current (IC) of -80 mA, with a total power dissipation rating of 100 mW at 25°C. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 160 to 460 at IC = -5 mA, and a transition frequency (fT) of 80 MHz. The component complies with the RoHS Directive and operates within a junction temperature range up to 125°C.

Feature Summary

• Integrates a 4.7 kΩ base resistor to simplify circuit design and reduce component count.
• Utilizes the compact SSSMini3-F1 surface-mount package for high-density board mounting.
• Optimized for low power consumption in digital logic applications.

Applications

• Digital logic interface circuits
• General-purpose switching applications
• High-density electronic equipment

Procurement Notes

Verify the specific lifecycle status on the manufacturer's official website before procurement, as this component may be subject to maintenance or discontinuation plans. Confirm that the required operating conditions align with the guaranteed specifications provided in the datasheet. Ensure compliance with export control regulations if applicable to your region. Always request the latest product standards during the final design stage to account for potential specification updates.

Selection Notes

Select this component when a compact PNP pre-biased transistor is required for digital switching. The integrated 4.7 kΩ resistor eliminates the need for external base drive components. Ensure the design accounts for the -80 mA maximum collector current and 100 mW power dissipation limits. Consider the -50 V voltage rating for appropriate signal levels. Verify thermal management requirements for ambient temperatures exceeding 25°C due to derating constraints.

Part Context

This part belongs to the UNR31 series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series is engineered specifically for digital circuits where space efficiency and simplified biasing are priorities. The UNR31A6 variant utilizes the SSSMini3-F1 package, which is distinct from other packages in the broader transistor family.

Replacement Considerations

Consult the manufacturer's cross-reference tools for verified substitutes. Ensure any replacement matches the SSSMini3-F1 package dimensions and pinout configuration. Verify that the substitute component meets or exceeds the -50 V voltage rating, -80 mA current capacity, and 4.7 kΩ internal resistance specifications.

FAQ

What is the value of the built-in base resistor?

The built-in base resistor (R1) has a nominal value of 4.7 kΩ, with a tolerance range of -30% to +30%.

What is the maximum collector current rating?

The absolute maximum rating for the collector current (IC) is -80 mA.

Does this component comply with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).