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The UNR31A6G0L is a silicon PNP epitaxial planar transistor with a built-in bias resistor, designed for digital circuits. It features a collector-emitter voltage of -50 V and a maximum collector current of -80 mA. The device includes an internal 4.7 kΩ input resistor (±30% tolerance) and delivers a forward current transfer ratio (hFE) ranging from 160 to 460 at IC = -5 mA. Transition frequency is rated at 80 MHz. Total power dissipation is limited to 100 mW, with a junction temperature range up to 125 °C. It is housed in the SSSMini3-F2 surface-mount package.
Verify component authenticity through authorized Panasonic Industry distributors or certified suppliers. Confirm RoHS compliance status and check the manufacturer's official lifecycle database for maintenance or discontinuation updates prior to procurement. Ensure storage conditions adhere to specified humidity and shelf-life requirements to prevent degradation.
Select this component when a compact PNP switch with integrated base resistance is required. Verify that the -80 mA collector current and 100 mW power dissipation meet the load requirements. Ensure the -50 V voltage rating aligns with the circuit supply rails. Consider the 4.7 kΩ internal resistor value for appropriate base drive calculations.
This part belongs to the UNR series of transistors with built-in resistors manufactured by Panasonic Electronic Components. These devices are engineered to reduce board space and assembly costs by integrating biasing networks directly into the transistor package. The UNR31A6G variant specifically utilizes the SSSMini3-F2 footprint for small-signal applications.
Consult the official Panasonic replacement guide for verified substitutes. Cross-reference pinouts and electrical parameters such as VCEO, IC, and hFE before substituting. Generic equivalents may not match the specific internal resistor tolerance or transition frequency characteristics.