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The UNR31A9G0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It operates with a collector-emitter voltage of -50 V and a maximum collector current of -80 mA. The device features a total power dissipation of 100 mW at 25°C and a junction temperature limit of 125°C. Internal resistors consist of R1 (1 kΩ) and R2 (10 kΩ), yielding a resistance ratio of approximately 0.10. The transition frequency is rated at 80 MHz under standard test conditions.
Verify the specific ordering suffix G0L against the manufacturer's official documentation to confirm package type and compliance status. Confirm availability status as the product may be subject to maintenance or discontinuation phases. Request the latest Product Standards directly from Panasonic Electronic Components before finalizing procurement decisions.
Select this component when a compact PNP switching solution with integrated biasing is required. Ensure the operating voltage does not exceed -50 V and the collector current remains within -80 mA limits. Verify that the SSSMini3-F2 package dimensions fit the PCB layout constraints. Consider the 100 mW power dissipation rating relative to the ambient temperature conditions.
This part belongs to the UNR31A9 series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series includes variants such as UNR31A9G and UNR31A9G0L, sharing similar electrical characteristics but potentially differing in packaging or compliance markings. These components are intended for general-purpose digital switching applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's website for the most up-to-date replacement information or equivalent products.