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The UNR31AEG0L is a PNP pre-biased bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components. It features an integrated base resistor of 47 kOhms and an emitter-base resistor, housed in the SSSMini3-F1 package (SOT-723). The device supports a maximum collector current of 80 mA and a collector-emitter breakdown voltage of 50 V. Key electrical parameters include a transition frequency of 80 MHz, a DC current gain of 35 at 5 mA, and a saturation voltage of 250 mV. Power dissipation is rated at 100 mW with a cutoff current of 500 nA.
Verify the specific suffix against official Panasonic documentation to confirm exact resistor values and pinout configuration. Confirm RoHS compliance status as datasheets may vary. Ensure the obsolete lifecycle status does not conflict with long-term production requirements before finalizing procurement plans.
Select this component when a compact PNP solution with built-in biasing is required. Compare the 47 kOhm base resistance against circuit drive requirements. Evaluate the 80 mA current limit against load demands. Consider the SSSMini3-F1 footprint compatibility during PCB layout design.
This part belongs to the UNR31 series of pre-biased transistors from Panasonic. These devices integrate resistors directly onto the silicon die or within the package to simplify amplifier and switch designs. The series offers various resistor combinations to suit different logic families and drive conditions.
Direct substitutes must match the PNP type, 50V rating, and SSSMini3-F1 package. Verify equivalent internal resistor values to maintain circuit stability. Cross-reference with other manufacturers' pre-biased BJT offerings if availability is constrained.