UNR31AEG0L

UNR31AEG0L

$0.06
  • Description:TRANS PREBIAS PNP 50V SSSMINI3
  • Series:-

SKU:b99680d9646b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SSSMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:80 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SSSMini3-F2

Download product information

UNR31AEG0L

Overview

The UNR31AEG0L is a PNP pre-biased bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components. It features an integrated base resistor of 47 kOhms and an emitter-base resistor, housed in the SSSMini3-F1 package (SOT-723). The device supports a maximum collector current of 80 mA and a collector-emitter breakdown voltage of 50 V. Key electrical parameters include a transition frequency of 80 MHz, a DC current gain of 35 at 5 mA, and a saturation voltage of 250 mV. Power dissipation is rated at 100 mW with a cutoff current of 500 nA.

Feature Summary

  • Integrated pre-biasing circuitry reduces component count and simplifies board layout
  • Compact surface-mount packaging suitable for space-constrained designs
  • High-frequency operation capability for signal processing applications

Applications

  • General-purpose switching circuits
  • Signal amplification stages
  • Logic interface level shifting

Procurement Notes

Verify the specific suffix against official Panasonic documentation to confirm exact resistor values and pinout configuration. Confirm RoHS compliance status as datasheets may vary. Ensure the obsolete lifecycle status does not conflict with long-term production requirements before finalizing procurement plans.

Selection Notes

Select this component when a compact PNP solution with built-in biasing is required. Compare the 47 kOhm base resistance against circuit drive requirements. Evaluate the 80 mA current limit against load demands. Consider the SSSMini3-F1 footprint compatibility during PCB layout design.

Part Context

This part belongs to the UNR31 series of pre-biased transistors from Panasonic. These devices integrate resistors directly onto the silicon die or within the package to simplify amplifier and switch designs. The series offers various resistor combinations to suit different logic families and drive conditions.

Replacement Considerations

Direct substitutes must match the PNP type, 50V rating, and SSSMini3-F1 package. Verify equivalent internal resistor values to maintain circuit stability. Cross-reference with other manufacturers' pre-biased BJT offerings if availability is constrained.

UNR31AEG0LUNR31AEG0L
$0.06
Buy Now