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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SSSMINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：80 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：80 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：SSSMini3-F1
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Overview
The UNR31AM00L is a PNP pre-biased bipolar junction transistor (BJT) manufactured by Panasonic Industry. It integrates base resistor R1 (2.2 kOhms) and emitter-base resistor R2 (47 kOhms) within an SSSMini3-F1 package, equivalent to SOT-723. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 80 mA. Key electrical characteristics include a DC current gain (hFE) of at least 80 at Ic=5mA/Vce=10V, saturation voltage of 250 mV at Ib=300µA/Ic=10mA, and a transition frequency of 80 MHz. Maximum power dissipation is rated at 100 mW with collector cutoff current limited to 500 nA.
Feature Summary
- Integrated biasing network combining base and emitter-base resistors for simplified circuit design
- Compact surface-mount packaging suitable for space-constrained applications
- High-speed switching capability defined by specified transition frequency
Applications
- Switching circuits in portable electronic devices
- Logic level translation interfaces
- Driver stages for low-power loads
Procurement Notes
Verify the obsolete status of this component before initiating procurement processes. Confirm availability through authorized distributors or secondary market channels as standard supply may be discontinued. Ensure that any substitute components meet identical electrical specifications and physical footprint requirements to maintain system integrity.
Selection Notes
Select this component when a PNP pre-biased transistor with specific internal resistance values is required. The integrated 2.2 kOhm base resistor and 47 kOhm emitter-base resistor eliminate external components. Verify that the 50 V breakdown voltage and 80 mA current limits align with the target application's operational parameters.
Part Context
This part belongs to the UNR31 series of pre-biased transistors from Panasonic Industry. The series offers various resistor combinations within compact packages. The UNR31AM00L specifically provides a PNP configuration with defined internal biasing ratios, distinguishing it from other variants in the family that may feature different resistance values or NPN polarity.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, verify compatibility with alternative pre-biased transistors having matching 50 V rating, 80 mA current capacity, and SSSMini3/SOT-723 package dimensions.
