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The UNR321600L is a silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an integrated base resistor (R1) of 4.7 kΩ and lacks a second resistor (R2). The device operates within a collector-to-emitter voltage (VCEO) of 50 V and a collector current (IC) of 100 mA. Total power dissipation is rated at 100 mW at 25°C ambient temperature. The forward current transfer ratio (hFE) ranges from 160 to 460 under standard test conditions. It utilizes the SSSMini3-F1 package, measuring 1.20 mm by 0.80 mm.
Verify the specific lifecycle status before procurement, as this series includes maintenance or discontinued stages. Consult official Panasonic Industry channels for the most recent product standards and availability information. Ensure design compliance with absolute maximum ratings during transient states like power-on or mode-switching to prevent defects.
Select the UNR321600L when a single 4.7 kΩ base resistor is required for NPN switching. This model differs from the UNR321N which includes dual resistors. Confirm that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the target digital application.
This component belongs to the UNR3210/3213/3216/321L/321N series of transistors with built-in resistors. All variants share the same SSSMini3-F1 package and core electrical characteristics, differing primarily in the resistance values and quantity of integrated resistors. The series is engineered for general-purpose digital logic interfacing.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult manufacturer resources for equivalent components if this specific part number is unavailable or has reached end-of-life status.
The internal resistor R1 has a nominal value of 4.7 kΩ with a tolerance range of -30% to +30%.
No, the UNR321600L does not include a second resistor R2; only R1 is present.
The maximum total power dissipation is 100 mW at an ambient temperature of 25°C.