SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UNR32A0G0L is a silicon NPN epitaxial planar transistor with a built-in resistor, designed for digital circuits. It features a collector-emitter voltage of 50 V and a maximum collector current of 80 mA. The device has a total power dissipation rating of 100 mW at 25°C and a transition frequency of 150 MHz. It includes an internal base resistor (R1) of 47 kΩ. The component is housed in the SSSMini3-F2 package, which corresponds to the SC-70 or SOT-323 footprint.
Verify the exact lifecycle status through official Panasonic channels before finalizing designs, as the datasheet indicates maintenance or discontinuation phases. Confirm that the SSSMini3-F2 package dimensions align with existing PCB footprints. Ensure compliance with RoHS Directive requirements if applicable to the target market regulations.
Select this component when a compact NPN pre-biased transistor is required for low-current digital switching. The 47 kΩ internal resistor sets the input impedance; verify that this value provides adequate drive current for the specific application logic levels. Consider the 100 mW power dissipation limit when calculating thermal performance in enclosed environments.
This part belongs to the Panasonic UNR series of transistors with built-in resistors. These components are engineered to replace discrete resistor-transistor combinations, thereby minimizing component count and assembly costs. The UNR32A0G variant specifically utilizes the SSSMini3-F2 package, offering a small form factor suitable for portable and space-constrained devices.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement lists from the manufacturer for end-of-life management.