UNR32A100L

Overview

The Panasonic UNR32A100L is a Silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an integrated base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 10 kΩ. The device operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 80 mA. Total power dissipation is rated at 100 mW at 25°C. Transition frequency reaches 150 MHz. It utilizes the SSSMini3-F1 surface-mount package.

Feature Summary

• Integrated biasing network with fixed internal resistance values
• Optimized for high-density mounting and equipment downsizing
• Designed to contribute to low power consumption in digital applications

Applications

• Digital logic interface circuits
• General-purpose switching applications
• Low-power consumer electronic devices

Procurement Notes

Verify component status through official Panasonic channels before procurement. Confirm RoHS compliance and specific lifecycle stage. Ensure ordering suffixes match exact packaging requirements. Validate datasheet revisions against final design specifications.

Selection Notes

Select this component for designs requiring pre-biased NPN transistors in compact form factors. Verify that the 10 kΩ internal resistance ratio meets circuit drive requirements. Ensure operating conditions remain within the 100 mW total power dissipation limit.

Part Context

This part belongs to the UNR32 series of transistors with built-in resistors manufactured by Panasonic Industry. These components are engineered specifically for digital circuit applications where space constraints and simplified biasing networks are critical design factors.

Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference electrical characteristics such as transition frequency and saturation voltage when evaluating alternatives.