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The UNR32A1G0L is a silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter voltage of 50 V and a maximum collector current of 80 mA. The device includes an internal base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 10 kΩ. Total power dissipation is rated at 100 mW, with a transition frequency of 150 MHz. It operates within a junction temperature range up to 125 °C and is housed in the SSSMini3-F2 package.
Verify the specific ordering suffix against official Panasonic documentation to confirm packaging type and compliance status. Confirm availability as the product lifecycle may indicate maintenance or discontinuation phases. Ensure the requested variant matches the required RoHS directive compliance for your manufacturing process.
Select this component when a compact NPN switching solution with integrated biasing is required. Verify that the 10 kΩ internal resistance values align with the target drive currents and logic levels. Ensure the 100 mW power dissipation rating accommodates the thermal environment of the final assembly.
This part belongs to the UNR32 series of transistors with built-in resistors manufactured by Panasonic Industry. These components are engineered specifically for surface-mount applications where space constraints and assembly efficiency are critical factors in electronic design.
Consult official Panasonic resources for verified substitute part numbers. Cross-referencing requires matching electrical parameters, pin configurations, and package dimensions to ensure functional compatibility without redesigning the host circuit board.
The device contains a base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 10 kΩ.
The maximum continuous collector current (IC) is rated at 80 mA.
No. The datasheet specifies use for standard applications like office and communications equipment. Special applications requiring exceptional reliability, such as aerospace, require direct consultation with sales staff.