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The UNR32A300L is a silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an SSSMini3-F1 package and operates with a collector-emitter voltage of 50 V and a collector current of 80 mA. The device includes internal base resistor R1 (47 kΩ) and emitter resistor R2 (47 kΩ). Key electrical parameters include a forward current transfer ratio (hFE) of 80 at IC = 5 mA, a collector-emitter saturation voltage of 0.25 V at IC = 10 mA, and a transition frequency of 150 MHz. Total power dissipation is rated at 100 mW.
Verify component status as the datasheet indicates maintenance or discontinued lifecycle stages. Confirm availability through official Panasonic Semiconductor channels or authorized distributors. Ensure compliance with RoHS Directive requirements during procurement. Request the latest Product Standards before final purchasing decisions to verify current specifications.
Select this component for standard digital circuit applications requiring integrated biasing resistors. Verify that the 50 V collector-emitter voltage and 80 mA current ratings meet system requirements. Consider the SSSMini3-F1 package dimensions for PCB layout constraints. Ensure operating temperatures remain within the specified -55°C to +125°C storage range.
The UNR32A3 series belongs to Panasonic's lineup of transistors with built-in resistors. These components are engineered for digital logic interfaces, simplifying circuit design by eliminating external biasing networks. The series supports general-purpose electronic equipment applications where space efficiency and power reduction are prioritized.
Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing requires matching electrical characteristics, package type, and pin configuration. Do not assume functional equivalence without validating against the manufacturer's replacement guidelines.