SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UNR32A400L is a silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SSSMini3-F1 package suitable for high-density mounting. Key electrical parameters include a collector-emitter voltage of 50 V and a collector current of 80 mA. The device has a total power dissipation of 100 mW at 25°C and a transition frequency of 150 MHz. Internal resistors consist of R1 (10 kΩ) and R2 (47 kΩ), providing a resistance ratio of approximately 0.21.
Verify the specific lifecycle status of the UNR32A400L directly with Panasonic Industry, as documentation indicates potential maintenance or discontinuation phases. Confirm that the internal resistor values and package dimensions match the required design specifications before finalizing procurement decisions.
Select this component when a compact NPN pre-biased transistor is required for digital switching applications. Ensure the 80 mA collector current and 100 mW power dissipation limits accommodate the target circuit load. Verify compatibility with the SSSMini3-F1 footprint during PCB layout planning.
This part belongs to the UNR series of transistors with built-in resistors manufactured by Panasonic Industry. These components are engineered to replace discrete resistor-transistor networks, offering space savings and simplified assembly processes for standard consumer and industrial electronics.
Publicly confirmed substitute part numbers for the UNR32A400L are not available in the provided source material. Consult official manufacturer databases for equivalent cross-references if this component is discontinued.
The internal resistors are R1 = 10 kΩ and R2 = 47 kΩ.
The maximum collector current (IC) is rated at 80 mA.
The transition frequency (fT) is 150 MHz under specified test conditions.