SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Panasonic UNR32A4G0L is a silicon NPN epitaxial planar pre-biased transistor designed for digital circuits. It integrates base resistor R1 (10 kΩ) and emitter-base resistor R2 (47 kΩ) within an SSSMini3-F2 package. Key electrical ratings include a collector-emitter voltage of 50 V, maximum collector current of 80 mA, and total power dissipation of 100 mW at 25°C. The device features a transition frequency of 150 MHz and a DC current gain (hFE) of 80 at IC = 5 mA. Saturation voltage is specified as 0.25 V at IC = 10 mA.
Verify the specific suffix 'G0L' against the manufacturer's official documentation to confirm exact packaging and lifecycle status. The datasheet indicates this product falls under maintenance or discontinued categories; consult the latest Panasonic Industry semiconductor catalog for current availability and obsolescence notices before finalizing procurement plans.
Select this component when a compact NPN pre-biased transistor with 10 kΩ base resistance is required. Ensure the application operates within the 50 V collector-emitter limit and 80 mA current constraint. Verify that the SSSMini3-F2 footprint matches the PCB layout requirements and that the 100 mW power dissipation rating accommodates the thermal environment.
The UNR32A4G0L belongs to the Panasonic UNR series of transistors with built-in resistors. This series utilizes silicon NPN epitaxial planar technology specifically engineered for digital switching applications. The part is housed in the SSSMini3-F2 package, which supports automated surface-mount assembly processes for consumer electronics and industrial control hardware.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires matching the 50V/80mA rating, 10kΩ/47kΩ resistor values, and SSSMini3-F2 package dimensions using independent distributor databases.