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The Panasonic UNR32A600L is a silicon NPN epitaxial planar transistor with a built-in resistor, designed for digital circuits. It features an SSSMini3-F1 package and operates with a collector-emitter voltage of 50 V and a maximum collector current of 80 mA. The device includes a 4.7 kΩ input resistor (±30% tolerance) and delivers a forward current transfer ratio (hFE) ranging from 160 to 460 at IC = 5 mA. Key electrical parameters include a transition frequency of 150 MHz, a collector-emitter saturation voltage of 0.25 V at IC = 10 mA, and a total power dissipation of 100 mW. The junction temperature rating is 125 °C.
Verify the specific lifecycle status through official Panasonic Industry channels before finalizing procurement plans. Confirm that the component meets all absolute maximum ratings and guaranteed operating conditions required by your design specifications. Ensure compliance with RoHS directives and handle the device according to standard semiconductor precautions to prevent damage during mounting or operation.
Select this component when a compact NPN pre-biased transistor is required for digital logic applications. The integrated 4.7 kΩ resistor simplifies circuit design by reducing external component count. Verify that the 50 V collector-emitter voltage and 80 mA current limits align with the target application's operational requirements and thermal constraints.
This part belongs to the Panasonic UNR series of transistors with built-in resistors. These components are engineered specifically for digital switching applications where space efficiency and simplified biasing networks are critical. The SSSMini3-F1 package allows for automated surface-mount assembly in high-volume manufacturing environments.
Consult official Panasonic documentation for confirmed substitute part numbers. Do not assume functional equivalence with other manufacturers' devices without verifying pinout, electrical characteristics, and package dimensions against the original datasheet.