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The Panasonic UNR32AAG0L is a single NPN pre-biased bipolar junction transistor (BJT) designed for digital circuit applications. It integrates an internal bias resistor network to simplify circuit design and reduce component count. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 80 mA. Key electrical specifications include a DC current gain (hFE) of at least 80 at IC=5mA and VCE=10V, with a saturation voltage of 250 mV max at IB=300µA and IC=10mA. The transition frequency is 150 MHz, and the maximum power dissipation is 100 mW. It is housed in an SSS Mini-3 (SOT-363) surface-mount package.
Verify the exact suffix against official Panasonic Industry documentation to confirm pinout and electrical tolerances. Confirm availability status as distribution listings may indicate obsolete or end-of-life conditions. Request the latest datasheet directly from the manufacturer to ensure compliance with current manufacturing specifications before initiating mass production orders.
Select this component when a compact NPN switch with integrated biasing is required. Ensure the 50V VCEO rating exceeds the peak circuit voltage. Verify that the 80mA IC limit accommodates the load current. Compare the SSS Mini-3 footprint against PCB layout constraints. Check thermal requirements against the 100mW power dissipation limit under operating conditions.
This part belongs to the Panasonic UNR32 series of pre-biased transistors. These devices are engineered for high-density mounting in portable and compact electronic equipment. The series typically includes various resistance value combinations within the same package form factor to suit different drive requirements.
Cross-reference with Panasonic UNR32A3 or similar NPN pre-biased transistors in SOT-363 packages. Verify pin compatibility and electrical parameters such as hFE and VCE(sat) before substitution. Consult official replacement lists for confirmed equivalents.