UNR32AM00L

UNR32AM00L

  • Description:TRANS PREBIAS NPN 50V SSSMINI3
  • Series:-

SKU:6d690ecbfb2d Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SSSMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:150 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SSSMini3-F1

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UNR32AM00L

Overview

The Panasonic UNR32AM00L is a pre-biased NPN bipolar junction transistor (BJT) designed for surface-mount applications. It integrates bias resistors within an SSSMini3-F2 package to simplify circuit design and reduce component count. Key electrical specifications include a collector-emitter breakdown voltage of 50 V, a maximum collector current of 80 mA, and a transition frequency of 150 MHz. The device features a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, with a maximum saturation voltage of 250 mV at 300 µA base current and 10 mA collector current. Maximum power dissipation is rated at 100 mW.

Feature Summary

  • Integrated bias resistors eliminate external resistor requirements, reducing board space and assembly complexity.
  • High-speed switching capability supported by a 150 MHz transition frequency suitable for RF and digital logic interfaces.
  • Compact SSSMini3-F2 surface-mount package facilitates automated placement and high-density PCB layouts.

Applications

  • Digital logic level shifting and interface circuits between microcontrollers and peripheral devices.
  • Switching applications in portable electronics and wearable technology where space is constrained.
  • Driver stages for low-current loads in consumer electronic appliances.

Procurement Notes

Verify the specific suffix '00L' against the manufacturer's latest datasheet to confirm resistor values and pinout configuration. Check part status as components may be subject to obsolescence or lifecycle changes. Ensure compatibility with RoHS and REACH regulations for the intended market. Confirm moisture sensitivity level (MSL) ratings if reflow soldering processes are utilized in manufacturing.

Selection Notes

Select this component when a compact NPN pre-biased transistor with 50 V rating and 80 mA current capacity is required. Compare hFE and saturation voltage parameters against alternative suppliers to ensure performance matching. Verify that the integrated resistor values align with the target drive current and logic voltage levels. Consider thermal management requirements given the 100 mW power dissipation limit in the small package.

Part Context

The UNR32 series represents Panasonic's line of single pre-biased transistors integrating base and emitter-base resistors. These devices are engineered to replace discrete BJT and resistor combinations, offering improved reliability and reduced footprint. The UNR32AM00L specifically denotes the NPN variant with defined internal resistance ratios, fitting into the broader category of smart discrete semiconductors for modern electronics.

Replacement Considerations

Publicly confirmed substitute part numbers for UNR32AM00L were not found in the provided source material. Cross-reference with other manufacturers' NPN pre-biased transistors having similar 50V/80mA ratings and SSSMini3 packages only after verifying exact electrical and mechanical compatibility.

UNR32AM00LUNR32AM00L

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