UNR32AMG0L

UNR32AMG0L

  • Description:TRANS PREBIAS NPN 50V SSSMINI3
  • Series:-

SKU:94cf1aa7888f Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SSSMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:150 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SSSMini3-F2

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UNR32AMG0L

Overview

The UNR32AMG0L is a single NPN pre-biased bipolar junction transistor manufactured by Panasonic Electronic Components. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 80mA. The device operates with a transition frequency of 150MHz and has a maximum power dissipation of 100mW. Key electrical characteristics include a DC current gain (hFE) of at least 80 at IC=5mA and VCE=10V, and a saturation voltage (VCEsat) of no more than 250mV at IC=10mA and IB=300µA. The component is housed in an SSS Mini-3 surface-mount package.

Feature Summary

  • Integrated biasing network for simplified circuit design
  • High-frequency operation capability up to 150MHz
  • Low saturation voltage for efficient switching performance

Applications

  • General-purpose switching circuits
  • Driver stages for low-power loads
  • Signal amplification in high-frequency applications

Procurement Notes

Verify the exact part number suffix against official Panasonic documentation, as variations such as UNR32ATG0L may exist with identical electrical specifications but different packaging or tape-and-reel configurations. Confirm availability status directly with authorized distributors, as specific variants may be subject to discontinuation notices. Ensure the supplier provides valid traceability documents matching the manufacturer's original production records.

Selection Notes

Select this component when a compact NPN transistor with integrated base biasing is required for space-constrained designs. Verify that the 80mA collector current limit and 100mW power dissipation meet the thermal requirements of the target application. Compare the 50V breakdown voltage against the maximum operating voltage of the circuit to ensure adequate safety margins under transient conditions.

Part Context

This component belongs to Panasonic's series of pre-biased transistors designed to replace discrete resistor-transistor combinations. These devices integrate internal bias resistors to reduce board space and assembly costs. The UNR32AMG0L specifically utilizes the SSS Mini-3 package, offering a small footprint suitable for dense surface-mount layouts in consumer and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with Panasonic's official replacement guides or consult manufacturer technical support for verified equivalents.

UNR32AMG0LUNR32AMG0L

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