UNR32AN00L

Overview

The UNR32AN00L is a single NPN pre-biased bipolar junction transistor (BJT) manufactured by Panasonic Industry. It integrates an internal base resistor within a compact SSS Mini3-F2 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 80 mA. Key electrical characteristics include a DC current gain (hFE) of at least 80 at 5 mA and 10 V, with a maximum saturation voltage of 250 mV under specified conditions. The component features a transition frequency of 150 MHz and a maximum power dissipation of 100 mW, designed for efficient signal switching and amplification in space-constrained electronic circuits.

Feature Summary

• Integrated base resistor simplifies circuit design by reducing external component count.
• Compact SSS Mini3-F2 package enables high-density board mounting.
• Optimized for low-voltage, high-speed switching applications.

Applications

• Signal switching in consumer electronics
• Driver circuits for small loads
• Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix to confirm exact packaging configuration and tape-and-reel specifications before procurement. Confirm that the component status remains active for new designs, as availability may vary by region and distributor. Ensure compatibility with existing PCB footprints and soldering profiles during integration planning.

Selection Notes

Select this component when a compact NPN pre-biased transistor is required for low-power switching tasks. Compare hFE and saturation voltage requirements against load conditions. Ensure the 100 mW power dissipation limit accommodates thermal constraints within the target enclosure. Verify that the 50 V breakdown voltage exceeds peak circuit voltages.

Part Context

This part belongs to the UNR series of pre-biased transistors from Panasonic Industry. These devices are engineered to replace discrete BJT and resistor combinations, saving board space and assembly time. The UNR32AN00L specifically targets applications requiring reliable NPN switching with integrated biasing in miniature packages.

Replacement Considerations

Direct substitutes include parts from the same family or equivalent NPN pre-biased transistors with matching pinouts and electrical ratings. Verify package dimensions and internal resistor values when cross-referencing with other manufacturers' offerings to ensure functional compatibility.