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The UNR411400A is a PNP silicon epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an NS-B1 package with three through-hole pins. Key electrical ratings include a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The internal resistor configuration consists of R1 at 10 kΩ and R2 at 47 kΩ, yielding a resistance ratio of approximately 0.21. The device has a total power dissipation rating of 300 mW and a transition frequency of 80 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact resistor values and packaging type. Confirm availability status as lifecycle information may change. Ensure compliance with RoHS directives if required by your application standards.
Select this component when a PNP transistor with integrated base and emitter resistors is needed for digital switching. Verify that the 10 kΩ base resistor and 47 kΩ emitter resistor match your circuit design requirements. Check that the -50 V voltage rating and -100 mA current capacity are sufficient for the load.
This part belongs to the Panasonic UNR411x series of pre-biased transistors. The series offers various resistor combinations to suit different drive conditions. The UNR4114 variant specifically pairs a 10 kΩ base resistor with a 47 kΩ emitter resistor.
Consult the manufacturer's official replacement list for verified substitutes. Generic equivalents may not replicate the precise internal resistor ratios or hFE characteristics defined in the datasheet.
The UNR411400A includes a base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 47 kΩ.
The maximum collector-emitter voltage (VCEO) is -50 V.
The transition frequency (fT) is specified as 80 MHz under standard test conditions.