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The UNR411E00A is a small signal PNP silicon epitaxial planar transistor from the UNR411x Series, designed for digital circuits. It features an integrated bias resistor network with R1 at 47 kΩ and R2 at 22 kΩ, yielding a resistance ratio of approximately 2.14. The device operates within a collector-emitter voltage limit of -50 V and supports a maximum collector current of -100 mA. Total power dissipation is rated at 300 mW at 25°C ambient temperature. Transition frequency reaches 80 MHz under specified conditions.
Verify product lifecycle status via official Panasonic channels before procurement. Confirm RoHS compliance documentation matches specific manufacturing batches. Ensure storage conditions adhere to damp-proof packing requirements if applicable. Validate that the NS-B1 package dimensions align with target PCB land patterns.
Select this variant specifically for its 47 kΩ and 22 kΩ internal resistor values. Verify that the -50 V collector-emitter rating meets circuit voltage requirements. Consider the 300 mW power dissipation limit when designing thermal management solutions. Ensure compatibility with through-hole mounting processes associated with the radial taping format.
This component belongs to the UNR411x Series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series offers various resistor combinations tailored for different digital circuit biasing needs. The UNR411E00A specifically provides a unique 47 kΩ/22 kΩ ratio distinct from other members like the UNR411D or UNR411F.
Consult official Panasonic documentation for verified substitute part numbers. Cross-reference internal resistor ratios and electrical ratings carefully. No direct public substitutes are confirmed in the provided datasheet.