UNR411F00A

Overview

The UNR411F00A is a silicon PNP epitaxial planar small signal transistor with built-in bias resistors, designed for digital circuits. It features an NS-B1 package with three through-hole terminals (Emitter, Collector, Base). Key electrical ratings include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a total power dissipation of 300 mW at 25°C. The integrated resistor network consists of R1 = 4.7 kΩ and R2 = 10 kΩ, yielding a resistance ratio of approximately 0.47. The device exhibits a transition frequency of 80 MHz and a forward current transfer ratio (hFE) minimum of 30.

Feature Summary

• Integrates dual bias resistors to reduce component count and board space in digital switching applications.
• Utilizes the compact NS-B1 radial taping package for automated assembly processes.
• Provides defined logic levels with high-level output near supply voltage and low-level saturation below 0.2 V.

Applications

• Digital logic interface circuits
• Switching control stages
• General-purpose signal processing

Procurement Notes

Verify the specific suffix 'F00A' against the manufacturer's current product standards before ordering. Confirm that the internal resistor values match the design requirements, as variations exist within the UNR411x series. Check the official Panasonic semiconductor website for the latest maintenance or discontinuation status to ensure long-term availability.

Selection Notes

Select this component when a PNP transistor with a specific base-to-emitter resistance ratio is required for direct logic interfacing. Ensure the circuit operates within the -50 V collector-emitter voltage limit and does not exceed the 300 mW power dissipation rating. Consider the 80 MHz transition frequency for high-speed switching needs compared to standard discrete transistors.

Part Context

This part belongs to the UNR411x Series of pre-biased transistors manufactured by Panasonic Electronic Components. The series offers various resistor combinations tailored for different drive requirements. The UNR411F variant specifically provides a 4.7 kΩ base resistor and a 10 kΩ emitter resistor configuration.

Replacement Considerations

Direct substitutes must match the PNP type, 50V rating, 100mA current, and the specific 4.7k/10k resistor ratio. Verify pinout compatibility with the NS-B1 package. Consult the manufacturer's cross-reference list for approved alternatives if this specific suffix is unavailable.

FAQ

What are the specific values of the built-in resistors for the UNR411F00A?

The UNR411F00A contains a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 10 kΩ.

What is the maximum collector-emitter voltage for this device?

The absolute maximum rating for the collector-emitter voltage (VCEO) is -50 V.

Does the UNR411F00A support surface mount technology?

No, the UNR411F00A uses the NS-B1 package which is designed for through-hole mounting with radial leads.