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The UNR411L00A is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an NS-B1 package with three pins and complies with the RoHS Directive. Key electrical ratings include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a total power dissipation of 300 mW at 25°C. The device incorporates a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ, resulting in a resistance ratio of 1.0. It exhibits a forward current transfer ratio (hFE) minimum of 20 at -5 mA and -10 V, with a transition frequency of 80 MHz.
Verify the specific suffix against Panasonic's official lifecycle database to confirm availability status. Check for any recent maintenance or discontinuation notices on the manufacturer website before finalizing procurement plans. Ensure compliance with export control regulations if applicable.
Select this component when a pre-biased PNP transistor with equal base and emitter resistance values is required. Verify that the -50V rating and 100mA current capacity meet the circuit requirements. Consider the NS-B1 through-hole package constraints during PCB layout.
This part belongs to the UNR411x Series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series offers various resistor combinations tailored for different digital switching needs within a compact form factor.
Consult the official Panasonic replacement list for equivalent parts. Verify pinout compatibility and electrical characteristics match before substitution.
The UNR411L00A contains a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ.
The maximum collector-emitter voltage (VCEO) is -50 V.
It has a transition frequency (fT) of 80 MHz, making it suitable for standard digital switching frequencies.