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The UNR421200A is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an NS-B1 package with three terminals: Emitter (Pin 1), Collector (Pin 2), and Base (Pin 3). The device supports a collector-emitter voltage of 50 V and a collector current of 100 mA, with a total power dissipation of 300 mW at 25°C. The internal configuration includes two resistors, R1 and R2, both rated at 22 kΩ. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 60 to 460 and a transition frequency of 150 MHz.
Verify the specific suffix '00A' against official Panasonic documentation, as standard datasheets list 'UNR4212'. Confirm availability status directly with the manufacturer or authorized distributors, as this series may be subject to maintenance or discontinuation plans. Ensure compliance with RoHS directives if required by your application specifications.
Select this component when a single NPN transistor with dual bias resistors is needed to simplify digital circuit layouts. The 22 kΩ resistor values are suitable for standard logic levels. Consider the 300 mW power dissipation limit and the 50 V voltage rating to ensure operation within absolute maximum ratings under all expected load conditions.
This part belongs to the UNR421x Series, which encompasses various combinations of NPN transistors and built-in resistors. The series is manufactured by Panasonic Electronic Components using silicon epitaxial planar technology. It is distinct from other Panasonic transistor families that may feature different packaging or single-resistor configurations.
Consult official Panasonic resources for direct replacements. Verify pinout compatibility and electrical parameters such as hFE ranges and resistance values before substituting.