UNR421300A

Overview

The UNR421300A is a silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an NS-B1 package and operates within a collector-emitter voltage of 50 V and a collector current of 100 mA. The component includes a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 47 kΩ. Electrical characteristics specify a forward current transfer ratio (hFE) ranging from 80 to 160 at IC = 5 mA and VCE = 10 V. Transition frequency reaches 150 MHz, while total power dissipation is rated at 300 mW.

Feature Summary

• Integrates dual resistors to reduce component count and equipment size
• Utilizes the new S type NS-B1 package for radial taping supply

Applications

• Digital circuit switching applications
• General electronic equipment such as office machines and measuring instruments

Procurement Notes

Verify the specific suffix against official Panasonic documentation to confirm exact resistance values and hFE ranking. Confirm compliance with RoHS Directive EU 2002/95/EC. Check for any maintenance or discontinuation status updates on the manufacturer's website before finalizing procurement plans.

Selection Notes

Select this component when designing compact digital logic circuits requiring integrated biasing. Ensure the required hFE gain falls within the specified range of 80 to 160. Verify that the operating ambient temperature remains within the guaranteed limits to maintain the 300 mW power dissipation rating without derating.

Part Context

This part belongs to the UNR421x Series manufactured by Panasonic Industry. The series consists of various NPN transistors with different internal resistor configurations tailored for standard digital applications. The UNR4213 variant specifically pairs two 47 kΩ resistors.

Replacement Considerations

Consult the official Panasonic datasheet for direct cross-references. Verify pinout compatibility with the NS-B1 package if substituting with other pre-biased transistor models.