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The UNR421400A is a single NPN silicon epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an NS-B1 package with three pins. Absolute maximum ratings include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 300 mW at 25°C. The junction temperature range extends up to 150°C. Electrical characteristics specify a forward current transfer ratio (hFE) minimum of 80 at IC = 5 mA and VCE = 10 V. The transition frequency is 150 MHz. Internal resistance values are R1 = 10 kΩ and R2 = 47 kΩ.
Verify the specific ordering suffix against official Panasonic documentation to confirm packaging details such as tape and reel specifications or quantity per container. Confirm the current lifecycle status, as this series may be subject to maintenance or discontinuation plans. Ensure compliance with export control regulations if applicable to your region.
Select the UNR421400A when a pre-biased NPN transistor is required for logic interfacing or switching applications. Verify that the internal resistor values (10 kΩ base, 47 kΩ emitter) align with the circuit design requirements. Ensure the operating conditions remain within the specified absolute maximum ratings to prevent device failure.
This component belongs to the UNR421x Series, which includes various part numbers differentiated by their internal resistor configurations. The series is manufactured by Panasonic Electronic Components using silicon NPN epitaxial planar technology. It serves as a compact solution for replacing discrete transistor and resistor networks in standard applications.
Consult official Panasonic documentation for verified substitute part numbers within the UNR421x family or equivalent components from other manufacturers. Ensure any replacement matches the electrical characteristics, pin configuration, and package dimensions.