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The UNR421900A is a silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter voltage of 50 V and a collector current rating of 100 mA. The device includes an internal base resistor (R1) of 1 kΩ and an emitter resistor (R2) of 10 kΩ. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 300 mW of power. Transition frequency reaches 150 MHz.
Verify the specific suffix against official Panasonic Industry documentation before procurement. Confirm that the requested part number matches the exact resistance values and package type required for the design. Check for any lifecycle status updates or discontinuation notices directly from the manufacturer's official channels to ensure availability.
Select this component when a compact NPN solution with integrated biasing is needed for digital logic interfaces. Ensure the application does not exceed the absolute maximum ratings for voltage, current, or power dissipation. Verify that the transition frequency meets the signal speed requirements of the target circuit design.
This component belongs to the UNR421x series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series offers various resistor combinations tailored for different digital circuit needs. The UNR4219 variant specifically provides a 1 kΩ base resistor and a 10 kΩ emitter resistor configuration.
Consult official Panasonic Industry resources for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' pre-biased transistors without verifying pinout and electrical specifications.
The UNR4219 contains a base resistor (R1) of 1 kΩ and an emitter resistor (R2) of 10 kΩ.
The maximum collector-emitter voltage (VCEO) is 50 V.
No, the datasheet specifies standard applications only and advises consulting sales staff for special applications like aerospace due to reliability requirements.