SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UNR421F00A is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage of 50 V and a maximum collector current of 100 mA. The device incorporates a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 10 kΩ. Electrical characteristics include a minimum forward current transfer ratio (hFE) of 30 at 5 mA and 10 V, and a transition frequency of 150 MHz. Total power dissipation is rated at 300 mW. The component utilizes the NS-B1 through-hole package.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the part number suffix matches the exact resistance values and package type required. Ensure compliance with RoHS directives if applicable to the assembly process. Review the latest product standards before final purchasing decisions as specifications may be subject to change.
Select this component when a pre-biased NPN transistor is required for digital switching. Verify that the integrated 4.7 kΩ base and 10 kΩ emitter resistors match the circuit design requirements. Ensure the 50 V collector-emitter voltage rating exceeds the maximum operating voltage. Check that the 100 mA collector current capability meets the load demands.
This component belongs to the UNR421x series of transistors with built-in resistors manufactured by Panasonic Industry. The series offers various resistor combinations tailored for different digital circuit needs. The UNR421F variant specifically provides a 4.7 kΩ base resistor and a 10 kΩ emitter resistor configuration within the standard NS-B1 package format.
Consult the UNR421x Series datasheet for alternative part numbers with matching electrical characteristics and resistor ratios. Verify pin compatibility and package dimensions before substitution. Cross-reference specific hFE ranks and saturation voltages to ensure functional equivalence in the target application.