UNR421F00A

UNR421F00A

$0.09
  • Description:TRANS PREBIAS NPN 50V NS-B1
  • Series:-

SKU:af7fb5d5fd0c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V NS-B1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:150 MHz
  • Power - Max:300 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:NS-B1

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UNR421F00A

Overview

The UNR421F00A is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage of 50 V and a maximum collector current of 100 mA. The device incorporates a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 10 kΩ. Electrical characteristics include a minimum forward current transfer ratio (hFE) of 30 at 5 mA and 10 V, and a transition frequency of 150 MHz. Total power dissipation is rated at 300 mW. The component utilizes the NS-B1 through-hole package.

Feature Summary

  • Integrates NPN transistor with internal bias resistors to reduce external component count
  • Utilizes NS-B1 radial taping compatible package for downsizing equipment
  • Designed specifically for digital circuit applications

Applications

  • Digital logic circuits
  • Switching applications
  • General electronic equipment

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the part number suffix matches the exact resistance values and package type required. Ensure compliance with RoHS directives if applicable to the assembly process. Review the latest product standards before final purchasing decisions as specifications may be subject to change.

Selection Notes

Select this component when a pre-biased NPN transistor is required for digital switching. Verify that the integrated 4.7 kΩ base and 10 kΩ emitter resistors match the circuit design requirements. Ensure the 50 V collector-emitter voltage rating exceeds the maximum operating voltage. Check that the 100 mA collector current capability meets the load demands.

Part Context

This component belongs to the UNR421x series of transistors with built-in resistors manufactured by Panasonic Industry. The series offers various resistor combinations tailored for different digital circuit needs. The UNR421F variant specifically provides a 4.7 kΩ base resistor and a 10 kΩ emitter resistor configuration within the standard NS-B1 package format.

Replacement Considerations

Consult the UNR421x Series datasheet for alternative part numbers with matching electrical characteristics and resistor ratios. Verify pin compatibility and package dimensions before substitution. Cross-reference specific hFE ranks and saturation voltages to ensure functional equivalence in the target application.

UNR421F00AUNR421F00A
$0.09
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