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The UNR5111G0L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an SMini3-F2 package (SC-70) with three pins: Base, Emitter, and Collector. The device has absolute maximum ratings of -50 V collector-emitter voltage, -100 mA collector current, and 150 mW total power dissipation at 25°C. Electrical characteristics include a typical forward current transfer ratio (hFE) of 35 and a collector-emitter saturation voltage of -0.25 V under specified conditions. The marking symbol is 6A, corresponding to internal resistances R1 and R2 of 10 kΩ each.
Verify the exact ordering suffix against official Panasonic documentation to confirm packaging format and specific variant details. Confirm RoHS compliance status and lifecycle stage through authorized distributors or the manufacturer's website before procurement.
Select this component when a compact PNP transistor with integrated base and emitter resistors is required. Ensure the circuit operates within the -50 V voltage limit and -100 mA current rating. Verify thermal management requirements against the 150 mW power dissipation specification.
This part belongs to the UNR511xG Series, which includes various combinations of built-in resistors. The 'G' suffix typically indicates RoHS compliance. The series is designed to replace discrete transistor and resistor configurations in space-constrained digital designs.
Consult official Panasonic documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' transistors without verifying pinout, electrical ratings, and package dimensions.
The UNR5111G features two built-in resistors, R1 and R2, both with a nominal value of 10 kΩ.
The absolute maximum collector-emitter voltage (VCEO) is -50 V.
It uses the SMini3-F2 package, also known as SC-70, with a rectangular plastic/epoxy body.