UNR5111G0L

UNR5111G0L

$0.32
  • Description:TRANS PREBIAS PNP 50V SMINI3
  • Series:-

SKU:1f38a7d9ec7c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:80 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-85
  • Supplier Device Package:SMini3-F2

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UNR5111G0L

Overview

The UNR5111G0L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an SMini3-F2 package (SC-70) with three pins: Base, Emitter, and Collector. The device has absolute maximum ratings of -50 V collector-emitter voltage, -100 mA collector current, and 150 mW total power dissipation at 25°C. Electrical characteristics include a typical forward current transfer ratio (hFE) of 35 and a collector-emitter saturation voltage of -0.25 V under specified conditions. The marking symbol is 6A, corresponding to internal resistances R1 and R2 of 10 kΩ each.

Feature Summary

  • Integrates bias resistors directly into the transistor structure to reduce component count and equipment size.
  • Utilizes an S-Mini type package that supports automatic insertion via tape/magazine packing.

Applications

  • Digital logic circuits
  • Switching applications
  • Bias resistor networks

Procurement Notes

Verify the exact ordering suffix against official Panasonic documentation to confirm packaging format and specific variant details. Confirm RoHS compliance status and lifecycle stage through authorized distributors or the manufacturer's website before procurement.

Selection Notes

Select this component when a compact PNP transistor with integrated base and emitter resistors is required. Ensure the circuit operates within the -50 V voltage limit and -100 mA current rating. Verify thermal management requirements against the 150 mW power dissipation specification.

Part Context

This part belongs to the UNR511xG Series, which includes various combinations of built-in resistors. The 'G' suffix typically indicates RoHS compliance. The series is designed to replace discrete transistor and resistor configurations in space-constrained digital designs.

Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' transistors without verifying pinout, electrical ratings, and package dimensions.

FAQ

What are the values of the built-in resistors for the UNR5111G?

The UNR5111G features two built-in resistors, R1 and R2, both with a nominal value of 10 kΩ.

What is the maximum collector-emitter voltage for this device?

The absolute maximum collector-emitter voltage (VCEO) is -50 V.

What package type does the UNR5111G use?

It uses the SMini3-F2 package, also known as SC-70, with a rectangular plastic/epoxy body.

UNR5111G0LUNR5111G0L
$0.32
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