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The UNR5112G0L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a maximum collector current of -100 mA and a collector-emitter voltage of -50 V. The device includes an internal base resistor (R1) of 22 kΩ and an emitter resistor (R2) of 22 kΩ. It operates within a junction temperature range up to 150 °C and has a total power dissipation rating of 150 mW at 25 °C ambient temperature.
Verify the specific ordering suffix against official Panasonic documentation to confirm packaging type and compliance status. Confirm availability through authorized distributors as lifecycle stages may vary. Ensure the part number matches the required resistance values and package dimensions before finalizing procurement orders.
Select this component when a PNP transistor with pre-biased resistors is needed for digital switching. Verify that the 22 kΩ internal resistance values align with the circuit design requirements. Check the transition frequency and saturation voltage specifications against the application's speed and load conditions.
This component belongs to the UNR511xG Series, which comprises various PNP transistors with different internal resistor configurations. The series is manufactured by Panasonic Electronic Components and is intended for standard applications in general electronic equipment.
Consult official Panasonic resources for verified substitutes. Cross-reference internal resistance values and electrical characteristics carefully when considering alternative components from other manufacturers.
The UNR5112G includes a base resistor (R1) of 22 kΩ and an emitter resistor (R2) of 22 kΩ.
The maximum collector current (IC) is rated at -100 mA.
It uses the SMini3-F2 package, which supports automatic insertion through tape or magazine packing.