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The UNR511300L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SMini3-G1 (SC-70) surface-mount package. Key electrical parameters include a collector-emitter voltage of -50 V, a maximum collector current of -100 mA, and a total power dissipation of 150 mW at 25°C. The device incorporates a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 47 kΩ. It exhibits a transition frequency of 80 MHz and a minimum DC current gain (hFE) of 80 at IC = -5 mA and VCE = -10 V.
Verify the specific marking code '6C' on the component body to confirm the UNR5113 variant. Confirm that the required resistance values match the internal 47kΩ/47kΩ configuration. Check manufacturer lifecycle status as this series may be discontinued or in maintenance phase. Ensure RoHS compliance documentation is available if required by local regulations.
Select this component when a compact PNP solution with fixed biasing is needed. Verify that the 47kΩ internal resistors provide appropriate base drive for the target load current. Consider the SC-70 footprint constraints during PCB layout. Compare against other UNR511x variants if different resistance ratios are required for specific logic levels.
This part belongs to the Panasonic UNR511x Series of transistors with built-in resistors. The series offers various combinations of R1 and R2 values to suit different digital interface requirements. The UNR5113 specifically provides equal 47kΩ resistances for both base and emitter connections.
Check Panasonic's official replacement list for the UNR511x series. Other UNR511x models with identical pinouts and similar electrical ratings may serve as functional substitutes if resistance values align with design needs.
The UNR511300L contains a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 47 kΩ.
The absolute maximum collector current (IC) is rated at -100 mA.
It uses the SMini3-G1 package, which corresponds to the EIAJ SC-70 standard.