UNR511400L

Overview

The UNR511400L is a PNP pre-biased transistor from the UNR511x series, designed for digital circuits. It features an integrated base resistor (R1) of 10 kΩ and emitter-base resistor (R2) of 47 kΩ within an SMini3-G1 package. Key electrical ratings include a collector-emitter voltage of -50 V, a maximum collector current of -100 mA, and a total power dissipation of 150 mW at 25°C. The device exhibits a transition frequency of 80 MHz and a forward current transfer ratio (hFE) minimum of 80 at -5 mA.

Feature Summary

• Integrates bias resistors to reduce component count and board space
• Utilizes SMini3-G1 surface mount packaging for automated insertion
• Optimized for digital circuit applications with defined logic levels

Applications

• Digital switching circuits
• Logic level translation
• Driver stages for low-current loads

Procurement Notes

Verify the exact suffix against official Panasonic documentation to confirm resistance values and binning. Confirm RoHS compliance status and lifecycle stage directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component when a PNP configuration with specific 10k/47k internal biasing is required. Ensure the -50V rating and 150mW power dissipation meet the target circuit's thermal and voltage requirements.

Part Context

This part belongs to the UNR511x series of silicon PNP epitaxial planar transistors. The series offers various internal resistor combinations tailored for different digital logic driving needs within a compact footprint.

Replacement Considerations

Consult the official datasheet for equivalent part numbers within the UNR511x family that match the required R1/R2 ratios and hFE bins. Verify pinout compatibility with the SMini3-G1 package.